sot-353 1 2SC4944 dual transistor (npn+ npn) features z small package (dual type) z high voltage and high current z high h fe, e xcellent h fe linearity z complementary to 2sa1873 marking: ly lgr maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55 to150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m i n t yp max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =2ma 120 400 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v transition frequency f t v ce =10v,i c =1ma 80 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 3.5 pf classification of h fe rank y gr range 120-240 200-400 marking ly lgr www.htsemi.com semiconductor jinyu 1 date:2011/ 05
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